Wednesday - December 25, 2024

Forming-Free Random-Access Memory (RRAM) Devices

2024-11-05

ALEXANDRIA, Virginia, Nov. 5 -- TETRAMEM INC., Fremont, California has been assigned a patent (No. US 12137622 B2, initially filed July 15, 2022) developed by three inventors Minxian Zhang, Amherst, Massachusetts; Mingche Wu, San Jose, California; and Ning Ge, Danville, California, for "Forming-free random-access memory (RRAM) devices." . . .

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Forming-Free Random-Access Memory (RRAM) Devices

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