Wednesday - December 25, 2024

Dynamic Random Access Memory (DRAM) Multi-Wordline Direct Refresh Management Including Aliasing Row Counter Policy for Row Hammer Mitigation

2024-10-29

ALEXANDRIA, Virginia, Oct. 29 -- MICRON TECHNOLOGY, INC., Boise, Idaho has been assigned a patent (No. US 12131768 B2, initially filed Aug. 26, 2022) developed by Kang-Yong Kim, Boise, Idaho, and Yang Lu, Boise, Idaho, for "Dynamic random access memory (DRAM) multi-wordline direct refresh management including aliasing row counter policy for row hammer mitigation." . . .

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Dynamic Random Access Memory (DRAM) Multi-Wordline Direct Refresh Management Including Aliasing Row Counter Policy for Row Hammer Mitigation

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