Three-Dimensional Memory Device With Contact via Structures Located Over Support Pillar Structures and Method of Making Thereof
Copyright © Targeted News Service 2024
2024-10-29
ALEXANDRIA, Virginia, Oct. 29 -- SANDISK TECHNOLOGIES LLC, Addison, Texas has been assigned a patent (No. US 12133382 B2, initially filed Feb. 23, 2022) developed by Xiang Yin, Yokkaichi, Japan, for "Three-dimensional memory device with contact via structures located over support pillar structures and method of making thereof." . . .