Thursday - December 26, 2024

LDMOS Transistor With Implant Alignment Spacers

2024-10-29

ALEXANDRIA, Virginia, Oct. 29 -- NXP USA, INC., Austin, Texas has been assigned a patent (No. US 12132099 B2, initially filed March 27, 2023) developed by five inventors Hernan Rueda, Chandler, Arizona; Rodney Arlan Barksdale, Buda, Texas; Stephen C. Chew, Dripping Springs, Texas; Martin Garcia, Buda, Texas; and Wayne Geoffrey Risner, Austin, Texas, for "LDMOS transistor with implant alignment spacers." . . .

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LDMOS Transistor With Implant Alignment Spacers

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