Friday - December 27, 2024

Group III-nitride (III-N) Devices With Reduced Contact Resistance and Their Methods of Fabrication

2024-10-22

ALEXANDRIA, Virginia, Oct. 22 -- INTEL CORPORATION, Santa Clara, California has been assigned a patent (No. US 12125888 B2, initially filed Sept. 29, 2017) developed by three inventors Marko Radosavljevic, Portland, Oregon; Han Wui Then, Portland, Oregon; and Sansaptak Dasgupta, Hillsboro, Oregon, for "Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication." . . .

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Group III-nitride (III-N) Devices With Reduced Contact Resistance and Their Methods of Fabrication

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