Friday - December 27, 2024

Piezo-Resistive Transistor Based Resonator With Anti-Ferroelectric Gate Dielectric

2024-10-22

ALEXANDRIA, Virginia, Oct. 22 -- INTEL CORPORATION, Santa Clara, California has been assigned a patent (No. US 12125893 B2, initially filed April 3, 2023) developed by six inventors Tanay Gosavi, Hillsboro, Oregon; Chia-Ching Lin, Portland, Oregon; Raseong Kim, Portland, Oregon; Ashish Verma Penumatcha, Hillsboro, Oregon; Uygar Avci, Portland, Oregon; and Ian Young, Portland, Oregon, for "Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric." . . .

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Piezo-Resistive Transistor Based Resonator With Anti-Ferroelectric Gate Dielectric

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