Friday - December 27, 2024

Method for Providing Doped Silicon Using a Diffusion Barrier Layer

2024-10-22

ALEXANDRIA, Virginia, Oct. 22 -- LAM RESEARCH CORPORATION, Fremont, California has been assigned a patent (No. US 12125705 B2, initially filed March 17, 2020) developed by six inventors Purushottam Kumar, Hillsboro, Oregon; Gengwei Jiang, Tigard, Oregon; Bart J. Van Schravendijk, Palo Alto, California; Tengfei Miao, Beaverton, Oregon; Joseph R. Abel, West Linn, Oregon; and Adrien Lavoie, Newberg, Oregon, for "Method for providing doped silicon using a diffusion barrier layer." . . .

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Method for Providing Doped Silicon Using a Diffusion Barrier Layer

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