Friday - May 17, 2024

Source or Drain Structures for Germanium N-Channel Devices

2024-04-30

ALEXANDRIA, Virginia, April 30 -- INTEL CORPORATION, Santa Clara, California has been assigned a patent (No. US 11973143 B2, initially filed March 28, 2019) developed by ten inventors Ryan Keech, Portland, Oregon; Benjamin Chu-Kung, Portland, Oregon; Subrina Rafique, Hillsboro, Oregon; Devin Merrill, McMinnville, Oregon; Ashish Agrawal, Hillsboro, Oregon; Harold Kennel, Portland, Oregon; Yang Cao, Beaverton, Oregon; Dipanjan Basu, Hillsboro, Oregon; Jessica Torres, Portland, Oregon; and Anand M . . .

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Source or Drain Structures for Germanium N-Channel Devices

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