Saturday - June 15, 2024

Ferroelectric Devices Including a Single Crystalline Ferroelectric Layer and Method of Making the Same

2024-04-30

ALEXANDRIA, Virginia, April 30 -- SANDISK TECHNOLOGIES LLC, Addison, Texas has been assigned a patent (No. US 11973123 B2, initially filed Jan. 18, 2022) developed by three inventors Adarsh Rajashekhar, Santa Clara, California; Raghuveer S. Makala, Campbell, California; and Kartik Sondhi, Milpitas, California, for "Ferroelectric devices including a single crystalline ferroelectric layer and method of making the same." . . .

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Ferroelectric Devices Including a Single Crystalline Ferroelectric Layer and Method of Making the Same

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