New Vishay Intertechnology 890 Nm IR Emitting Diode Offers High Typical Radiant Intensity of 235 MW/sr and Fast Switching Times of 15 Ns
July 18, 2024
July 18, 2024
MALVERN, Pennsylvania, July 18 -- Vishay Intertechnology Inc. issued the following news release:
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Built on Surface Emitter Technology, High Speed Device Features Excellent Temperature Coefficient of VF of -1.0 mV/K
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Vishay Intertechnology, Inc. (NYSE: VSH) is broadening its optoelectronics portfolio with the introduction of a new 890 nm high speed infrared (IR) emitting diode in a clear, untinted leaded plastic package. Based on surfa . . .
* * *
Built on Surface Emitter Technology, High Speed Device Features Excellent Temperature Coefficient of VF of -1.0 mV/K
* * *
Vishay Intertechnology, Inc. (NYSE: VSH) is broadening its optoelectronics portfolio with the introduction of a new 890 nm high speed infrared (IR) emitting diode in a clear, untinted leaded plastic package. Based on surfa . . .