PISCATAWAY, New Jersey, May 3 -- IEEE Electron Device Letters, a peer-reviewed journal from the Institute of Electrical and Electronics Engineers that says it features electron and ion integrated circuit devices and interconnects, published research articles, including the following topics, in its May 2021 edition:

* Amorphous ZrO2 Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 400

* Bendable Microwave AlGaN/GaN High-Electron-Mobility Transisto . . .

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