University of Arkansas: Researchers Improve Semiconductor Laser on Silicon
June 20, 2019
June 20, 2019
FAYETTEVILLE, Arkansas, June 20 [TNSscienceresearch] -- The University of Arkansas issued the following news:
Electrical engineering researchers have boosted the operating temperature of a promising new semiconductor laser on silicon substrate, moving it one step closer to possible commercial application.
The development of an "optically pumped" laser, made of germanium tin grown on silicon substrates, could lead to faster micro-processing speed of computer ch . . .
Electrical engineering researchers have boosted the operating temperature of a promising new semiconductor laser on silicon substrate, moving it one step closer to possible commercial application.
The development of an "optically pumped" laser, made of germanium tin grown on silicon substrates, could lead to faster micro-processing speed of computer ch . . .