Sunday - June 2, 2024

Source or Drain Structures With High Phosphorous Dopant Concentration

2024-04-09

ALEXANDRIA, Virginia, April 9 -- INTEL CORPORATION, Santa Clara, California has been assigned a patent (No. US 11955482 B2, initially filed May 18, 2020) developed by five inventors Robert Ehlert, Portand, Oregon; Timothy Jen, Hillsboro, Oregon; Alexander Badmaev, Portland, Oregon; Shridhar Hegde, Beaverton, Oregon; and Sandrine Charue-Bakker, Portland, Oregon, for "Source or drain structures with high phosphorous dopant concentration." . . .

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Source or Drain Structures With High Phosphorous Dopant Concentration

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