Sunday - June 2, 2024

Ion Implantation to Reduce Nanosheet Gate Length Variation

2024-04-09

ALEXANDRIA, Virginia, April 9 -- APPLIED MATERIALS, INC., Santa Clara, California has been assigned a patent (No. US 11955533 B2, initially filed July 26, 2022) developed by five inventors Sipeng Gu, Clifton Park, New York; Baonian Guo, Andover, Massachusetts; Qintao Zhang, Mt Kisco, New York; Wei Zou, Lexington, Massachusetts; and Kyuha Shim, Andover, Massachusetts, for "Ion implantation to reduce nanosheet gate length variation." . . .

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Ion Implantation to Reduce Nanosheet Gate Length Variation

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