Sunday - June 2, 2024

Process of Forming an Electronic Device Including a Doped Gate Electrode

2024-03-26

ALEXANDRIA, Virginia, March 26 -- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, Arizona has been assigned a patent (No. US 11942326 B2, initially filed Dec. 16, 2020) developed by five inventors Petr Kostelnik, Frenstat Pod Radhostem, Czech Republic; Tomas Novak, Zubri, Czech Republic; Peter Coppens, Kanegem, Belgium; Peter Moens, Erwetegem, Belgium; and Abhishek Banerjee, Kruibeke, Belgium, for "Process of forming an electronic device including a doped gate electrode." . . .

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Process of Forming an Electronic Device Including a Doped Gate Electrode

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