Tokyo Institute of Technology: Utilizing Palladium for Addressing Contact Issues of Buried Oxide Thin Film Transistors
April 12, 2024
April 12, 2024
TOKYO, Japan, April 12 (TNSres) -- Tokyo Institute of Technology issued the following news release:
A novel method that employs palladium to inject hydrogen into the deeply buried oxide-metal electrode contacts of amorphous oxide semiconductors (AOSs) storage devices, which reduces contact resistance, has been developed by scientists at Tokyo Tech. This innovative method presents a valuable solution for addressing the contact issues of AOSs, paving the way for their application in n . . .
A novel method that employs palladium to inject hydrogen into the deeply buried oxide-metal electrode contacts of amorphous oxide semiconductors (AOSs) storage devices, which reduces contact resistance, has been developed by scientists at Tokyo Tech. This innovative method presents a valuable solution for addressing the contact issues of AOSs, paving the way for their application in n . . .