Vermont, New York Inventors Develop Enhanced Silicon-On-Insulator Transistor

ALEXANDRIA, Va., Aug. 3 -- Toshiharu Furukawa, William Robert Tonti, and Richard Quimby Williams, all from Essex Junction, Vt., and Carl John Radens of LaGrangeville, N.Y., have developed enhanced silicon-on-insulator (SOI) transistors.

According to the U.S. Patent & Trademark Office: "Enhanced SOI transistors and methods are provided for implementing enhanced silicon-on-insulator transistors. The enhanced SOI transistors include a thin buried oxide layer under a device channel an . . .