Vermont, New York Inventors Develop Transistor Formation Method

ALEXANDRIA, Va., Aug. 3 -- Toshiharu Furukawa and David V. Horak, both of Essex Junction, Vt., Mark C. Hakey of Fairfax, Vt., Peter H. Mitchell of Jericho, Vt., Larry A. Nesbit of Williston, Vt., Steven J. Holmes of Guilderland, N.Y., and Charles W. Koburger III of Delmar, N.Y., have developed transistors formation method.

According to the U.S. Patent & Trademark Office, the invention relates to a "method for forming transistors with mutually-aligned double gates. The method inclu . . .