New York Inventors Develop Integrated Circuit Devices Formation Method
Copyright © Targeted News Service 2007
2007-10-29
ALEXANDRIA, Va., Oct. 29 -- Duk Ho Hong, Kyoung Woo Lee and Roman Knoefler, all from Fishkill, N.Y., and Markus Naujok of Hopewell Junction, N.Y., have developed integrated circuit fabrication methods.
An abstract of the invention, released by the U.S. Patent & Trademark Office, said: "Methods of forming metal interconnect layers include forming an electrically insulating layer having a contact hole therein, on a semiconductor substrate and then forming a recess in the electricall . . .
An abstract of the invention, released by the U.S. Patent & Trademark Office, said: "Methods of forming metal interconnect layers include forming an electrically insulating layer having a contact hole therein, on a semiconductor substrate and then forming a recess in the electricall . . .