New York Inventor Develops Patterning Sub-Lithographic Features, Variable Widths
Copyright © Targeted News Service 2008
2008-08-16
ALEXANDRIA, Va., Aug. 16 -- Haining S. Yang of Wappingers Falls, N.Y., has developed a method for processing substrate.
According to the U.S. Patent & Trademark Office: "A method of processing a substrate of a device comprises the as following steps. Form a cap layer over the substrate. Form a dummy layer over the cap layer, the cap layer having a top surface. Etch the dummy layer forming patterned dummy elements of variable widths and exposing sidewalls of the dummy elements and . . .
According to the U.S. Patent & Trademark Office: "A method of processing a substrate of a device comprises the as following steps. Form a cap layer over the substrate. Form a dummy layer over the cap layer, the cap layer having a top surface. Etch the dummy layer forming patterned dummy elements of variable widths and exposing sidewalls of the dummy elements and . . .